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The structural configuration of GaSe/HfS2 heterostructure with a side view (left) and top view (right).
In this paper, Carmine Autieri and Rajibul Islam from MagTop, collaborated with researchers from Beihang University, Hefei, China and Tata Institute of Fundamental Research, Mumbai, India. The authors worked on laser irradiation effect on the p‑GaSe/n-HfS2 PN-heterojunction for high-performance phototransistors.